Infineon IPN60R1K5CE: A 600V CoolMOS™ CE Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switch is a critical component whose performance directly impacts overall efficacy. The Infineon IPN60R1K5CE, a 600V CoolMOS™ CE Power MOSFET, is engineered specifically to meet these challenges, offering a superior blend of low losses, robust switching performance, and high reliability for a wide array of high-efficiency switching applications.

A key innovation of this MOSFET is its advanced CoolMOS™ CE (Civil Engineering) technology. This proprietary technology represents a significant leap forward from standard Superjunction (SJ) MOSFETs. It is meticulously designed to minimize both conduction and switching losses, which are the primary sources of energy waste in power supplies. By achieving an exceptionally low figure-of-merit (RDS(on) x Qg), the device ensures that less energy is dissipated as heat, leading to cooler operation and higher system efficiency. This makes it an ideal candidate for demanding environments such as server and telecom power supplies, where energy consumption and thermal management are paramount.

The device boasts a maximum drain-source voltage (VDS) of 600V, providing ample headroom for operation in universal mains applications (85 VAC to 305 VAC) and power factor correction (PFC) stages. Its low on-state resistance (RDS(on)) of just 1.5 Ω at room temperature directly translates to reduced conduction losses, allowing for more power to be delivered to the load with minimal voltage drop across the switch.

Furthermore, the IPN60R1K5CE exhibits excellent switching characteristics. Its optimized gate charge ensures fast turn-on and turn-off transitions, which is crucial for operating at higher frequencies. The ability to switch at higher frequencies enables designers to use smaller passive components like inductors and transformers, thereby increasing the power density of the final design and allowing for more compact end products.

Housed in the space-saving TO-220 FullPAK, this package offers a fully isolated mounting surface. This isolation simplifies the thermal management process by allowing the MOSFET to be directly mounted to a heatsink without the need for an additional insulating washer, improving both assembly time and long-term reliability.

ICGOOODFIND: The Infineon IPN60R1K5CE stands out as a premier solution for designers pushing the limits of efficiency and size. Its combination of revolutionary CoolMOS™ CE technology, low RDS(on), excellent switching performance, and isolated packaging makes it a top-tier choice for high-performance switched-mode power supplies (SMPS), lighting controls, and industrial power systems.

Keywords:

1. CoolMOS™ CE Technology

2. High-Efficiency

3. Low RDS(on)

4. 600V

5. Switching Applications